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| PTF 10149 70 Watts, 921-960 MHz GOLDMOS Field Effect Transistor Description The PTF 10149 is an internally matched 70-watt GOLDMOS FET intended for cellular and GSM amplifier applications from 921 to 960 MHz. It operates with 50% efficiency and 16 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. * * INTERNALLY MATCHED Performance at 960 MHz, 26 Volts - Output Power = 70 Watts - Power Gain = 16.0 dB Typ - Efficiency = 50% Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability 100% Lot Traceability * * * * Typical Output Power & Efficiency vs. Input Power 100 Efficiency 60 50 Efficiency (%) x 40 Output Power (Watts) 80 60 40 20 0 0 1 2 3 e A-12 1014 3456 9 99 35 VDD = 26 V IDQ = 750 mA f = 960 MHz Output Pow er 30 20 10 Package 20252 Input Power (Watts) RF Specifications (100% tested) Characteristic Gain (VDD = 26 V, POUT = 70 W, IDQ = 750 mA, f = 960 MHz) Power Output at 1 dB Compression (VDD = 26 V, IDQ = 750 mA, f = 960 MHz) Drain Efficiency (VDD = 26 V, POUT = 70 W, IDQ = 750 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 26 V, POUT = 70 W, IDQ = 750 mA, f = 921 MHz --all phase angles at frequency of test) All published data at TCASE = 25C unless otherwise indicated. Symbol Gpe P-1dB h Y Min 15.0 70 47 -- Typ 16.0 75 50 -- Max -- -- -- 5:1 Units dB Watts % -- e 1 PTF 10149 Electrical Characteristics Characteristic (100% Tested) e Conditions Symbol V(BR)DSS IDSS VGS(th) gfs Min 65 -- 3.0 -- Typ -- -- -- 3.0 Max -- 1.0 5.0 -- Units Volts mA Volts Siemens Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance VDS = 26 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 3 A Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C) TSTG RqJC Symbol VDSS VGS TJ PD Value 65 20 200 197 1.12 -40 to +150 0.89 Unit Vdc Vdc C Watts W/C C C/W Typical Performance Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency Output Power & Efficiency 17 Gain (dB) Gain (dB) x 15 13 11 9 920 100 80 Output Pow er (W) 60 Efficiency (%) 930 940 950 40 960 120 20 Broadband Test Fixture Performance Efficiency (%) 60 50 16 Gain (dB) Gain 12 VDD = 26 V IDQ = 750 mA POUT = 70 W 40 -30 5 20 -15 VDD = 26 V IDQ = 750 mA 8 Return Loss 4 920 10 -25 0 -35 960 Frequency (MHz) 930 940 950 Frequency (MHz) 2 Return Loss (dB) x Efficiency e Power Gain vs. Output Power 18 IDQ = 750 80 PTF 10149 Output Power vs. Supply Voltage Output Power (Watts) Power Gain (dB) 17 70 16 IDQ = 375 15 IDQ = 187 14 1 10 100 60 VDD = 26 V f = 960 MHz 50 IDQ = 750 mA f = 960 MHz 22 24 26 28 30 40 Output Power (Watts) Supply Voltage (Volts) Intermodulation Distortion vs. Output Power (as measured in a broadband circuit) -10 -20 Capacitance vs. Supply Voltage * 200 180 160 140 120 100 80 60 40 20 0 0 40 Cgs VGS = 0 V f = 1 MHz 35 30 25 20 15 10 IM3 (dBc) -30 -40 -50 -60 0 10 20 30 40 50 60 IM 3 Cds IM 5 IM 7 Crss 5 0 10 20 30 40 70 80 Output Power (Watts-PEP) Supply Voltage (Volts) * This part is internally matched. Measurements of the finished product will not yield these figures. Bias Voltage vs. Temperature 1.03 1.02 Bias Voltage (V) 1.01 1.00 0.99 0.98 0.97 0.96 0.95 -20 30 Temp. (C) 80 130 0.40 1.53 2.67 3.80 4.93 6.07 Voltage normalized to 1.0 V Series show current (A) 3 Crss (pF) x VDD = 26 V, IDQ = 750 mA f1 = 942 MHz, f2 = 942.1 MHz Cds & Cgs (pF) x PTF 10149 Impedance Data (VDD = 26 V, POUT = 70 W, IDQ = 700 mA) D e Z0 = 10 W Z Source Z Load G S Frequency MHz 920 930 940 950 960 R Z Source W jX -0.64 -0.60 -0.55 -0.34 -0.21 R 1.45 1.44 1.43 1.42 1.40 Z Load W jX 1.08 1.06 1.05 1.03 1.02 1.40 1.43 1.45 1.50 1.55 Test Circuit Test Circuit Schematic for f = 960 MHz DUT PTF 10149 l1 0.0633 l 960 GHz l2 0.1142 l 960 GHz l3 0.0821 l 960 GHz l4 0.1294 l 960 GHz l5 0.0468 l 960 GHz l6 0.0481 l 960 GHz l7 0.0441 l 960 GHz l8 0.2500 l 960 GHz l9 0.1398 l 960 GHz l10 0.0821 l 960 GHz l11 0.0226 l 960 GHz l12 0.0109 l 960 GHz l13 0.0504 l 960 GHz l14 0.034 l 960 GHz LDMOS Field Effect Transistor Microstrip 50 W Microstrip 50 W Microstrip 50 W Microstrip 9.18 W Microstrip 9.18 W Microstrip 6.79 W Microstrip 6.79 W Microstrip 59 W Microstrip 6.79 W Microstrip 50 W Microstrip 9.69 W Microstrip 9.69 W Microstrip 50 W Microstrip 50 W 4 C1, C3, C8, C12 33 pF Capacitor ATC 100 B C2 1.3 pF, 50 V Capacitor, ATC 100 B C4 Not Used C5, C6, C7 7.5 pF Capacitor, ATC 100 B C9 100 mF, 50 V Capacitor, Digi-Key P5182-ND C10 0.1 uF, 50 V Capacitor, Digi-Key P4525-ND C11 0.3 pF Capacitor ATC 100 B R1, R2 1K Resistor, Digi-Key 1KQBK L1, L2 4 Turn, 20 AWG, .120" I.D. Circuit Board .031" thick, er = 4.0, G200, AlliedSignal, 2 oz. copper e PTF 10149 A-1234569935 10149 Assembly Diagram Artwork (not to scale) 5 PTF 10149 Case Outline Specifications Package 20252 e Ericsson Inc. Microelectronics Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. L3 (c) 1999, 2000 Ericsson Inc. EUS/KR 1522-PTF 10149 Uen Rev. B 12-19-00 6 |
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